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?2001 silicon storage technology, inc. s71117-04-000 6/01 360 1 the sst logo and superflash are registered trademarks of silicon storage technology, inc. mpf is a trademark of silicon storage technology, inc. these specifications are subject to change without notice. data sheet features: ? organized as 128k x16 / 256k x16 / 512k x16 single voltage read and write operations ? 3.0-3.6v for sst39lf200a/400a/800a ? 2.7-3.6v for sst39vf200a/400a/800a superior reliability ? endurance: 100,000 cycles (typical) ? greater than 100 years data retention low power consumption ? active current: 20 ma (typical) ? standby current: 3 a (typical) sector-erase capability ? uniform 2 kword sectors block-erase capability ? uniform 32 kword blocks fast read access time ? 45 and 55 ns for sst39lf200a/400a ? 55 ns for sst39lf800a ? 70 and 90 ns for sst39vf200a/400a/800a latched address and data fast erase and word-program ? sector-erase time: 18 ms (typical) ? block-erase time: 18 ms (typical) ? chip-erase time: 70 ms (typical) ? word-program time: 14 s (typical) ? chip rewrite time: 2 seconds (typical) for sst39lf/vf200a 4 seconds (typical) for sst39lf/vf400a 8 seconds (typical) for sst39lf/vf800a automatic write timing ? internal v pp generation end-of-write detection ? toggle bit ? data# polling cmos i/o compatibility jedec standard ? flash eeprom pinouts and command sets packages available ? 48-lead tsop (12mm x 20mm) ? 48-ball tfbga (6mm x 8mm and 8mm x 10mm) product description the sst39lf200a/400a/800a and sst39vf200a/400a/ 800a devices are 128k x16 / 256k x16 / 512k x16 cmos multi-purpose flash (mpf) manufactured with sst ? s pro- prietary, high performance cmos superflash technology. the split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. the sst39lf200a/400a/800a write (program or erase) with a 3.0-3.6v power supply. the sst39vf200a/400a/800a write (program or erase) with a 2.7-3.6v power supply. these devices conform to jedec standard pinouts for x16 memories. featuring high performance word-program, the sst39lf200a/400a/800a and sst39vf200a/400a/ 800a devices provide a typical word-program time of 14 sec. the devices use toggle bit or data# polling to detect the completion of the program or erase operation. to pro- tect against inadvertent write, they have on-chip hardware and software data protection schemes. designed, manu- factured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed endurance of 10,000 cycles. data retention is rated at greater than 100 years. the sst39lf200a/400a/800a and sst39vf200a/400a/ 800a devices are suited for applications that require conve- nient and economical updating of program, configuration, or data memory. for all system applications, they signifi- cantly improve performance and reliability, while lowering power consumption. they inherently use less energy dur- ing erase and program than alternative flash technologies. when programming a flash device, the total energy con- sumed is a function of the applied voltage, current, and time of application. since for any given voltage range, the superflash technology uses less current to program and has a shorter erase time, the total energy consumed during any erase or program operation is less than alternative flash technologies. these devices also improve flexibility while lowering the cost for program, data, and configuration storage applications. the superflash technology provides fixed erase and pro- gram times, independent of the number of erase/program cycles that have occurred. therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose erase and program times increase with accumulated erase/pro- gram cycles. to meet surface mount requirements, the sst39lf200a/ 400a/800a and sst39vf200a/400a/800a are offered in both 48-lead tsop packages and 48-ball tfbga pack- ages. see figures 1 and 2 for pinouts. 2 mbit / 4 mbit / 8 mbit (x16) multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a sst39lf/vf200a / 400a / 800a3.0 & 2.7v 2mb / 4mb / 8mb (x16) mpf memories
2 data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 device operation commands are used to initiate the memory operation func- tions of the device. commands are written to the device using standard microprocessor write sequences. a com- mand is written by asserting we# low while keeping ce# low. the address bus is latched on the falling edge of we# or ce#, whichever occurs last. the data bus is latched on the rising edge of we# or ce#, whichever occurs first. read the read operation of the sst39lf200a/400a/800a and sst39vf200a/400a/800a is controlled by ce# and oe#, both have to be low for the system to obtain data from the outputs. ce# is used for device selection. when ce# is high, the chip is deselected and only standby power is con- sumed. oe# is the output control and is used to gate data from the output pins. the data bus is in high impedance state when either ce# or oe# is high. refer to the read cycle timing diagram for further details (figure 3). word-program operation the sst39lf200a/400a/800a and sst39vf200a/400a/ 800a are programmed on a word-by-word basis. before programming, one must ensure that the sector, in which the word which is being programmed exists, is fully erased. the program operation consists of three steps. the first step is the three-byte load sequence for software data pro- tection. the second step is to load word address and word data. during the word-program operation, the addresses are latched on the falling edge of either ce# or we#, whichever occurs last. the data is latched on the rising edge of either ce# or we#, whichever occurs first. the third step is the internal program operation which is initi- ated after the rising edge of the fourth we# or ce#, which- ever occurs first. the program operation, once initiated, will be completed within 20 s. see figures 4 and 5 for we# and ce# controlled program operation timing diagrams and figure 16 for flowcharts. during the program opera- tion, the only valid reads are data# polling and toggle bit. during the internal program operation, the host is free to perform additional tasks. any commands issued during the internal program operation are ignored. sector/block-erase operation the sector- (or block-) erase operation allows the system to erase the device on a sector-by-sector (or block-by- block) basis. the sst39lf200a/400a/800a and sst39vf200a/400a/800a offers both sector-erase and block-erase mode. the sector architecture is based on uniform sector size of 2 kword. the block-erase mode is based on uniform block size of 32 kword. the sector- erase operation is initiated by executing a six-byte com- mand sequence with sector-erase command (30h) and sector address (sa) in the last bus cycle. the block-erase operation is initiated by executing a six-byte command sequence with block-erase command (50h) and block address (ba) in the last bus cycle. the sector or block address is latched on the falling edge of the sixth we# pulse, while the command (30h or 50h) is latched on the rising edge of the sixth we# pulse. the internal erase operation begins after the sixth we# pulse. the end-of- erase operation can be determined using either data# polling or toggle bit methods. see figures 9 and 10 for tim- ing waveforms. any commands issued during the sector- or block-erase operation are ignored. chip-erase operation the sst39lf200a/400a/800a and sst39vf200a/400a/ 800a provide a chip-erase operation, which allows the user to erase the entire memory array to the ? 1 ? state. this is useful when the entire device must be quickly erased. the chip-erase operation is initiated by executing a six- byte command sequence with chip-erase command (10h) at address 5555h in the last byte sequence. the erase operation begins with the rising edge of the sixth we# or ce#, whichever occurs first. during the erase operation, the only valid read is toggle bit or data# polling. see table 4 for the command sequence, figure 8 for timing diagram, and figure 19 for the flowchart. any commands issued dur- ing the chip-erase operation are ignored. write operation status detection the sst39lf200a/400a/800a and sst39vf200a/400a/ 800a provide two software means to detect the completion of a write (program or erase) cycle, in order to optimize the system write cycle time. the software detection includes two status bits: data# polling (dq 7 ) and toggle bit (dq 6 ). the end-of-write detection mode is enabled after the rising edge of we#, which initiates the internal program or erase operation. the actual completion of the nonvolatile write is asynchro- nous with the system; therefore, either a data# polling or toggle bit read may be simultaneous with the completion of the write cycle. if this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to con- flict with either dq 7 or dq 6 . in order to prevent spurious rejection, if an erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. if both reads are valid, then the device has completed the write cycle, otherwise the rejec- tion is valid.
data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a 3 ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 data# polling (dq 7 ) when the sst39lf200a/400a/800a and sst39vf200a/ 400a/800a are in the internal program operation, any attempt to read dq 7 will produce the complement of the true data. once the program operation is completed, dq 7 will produce true data. the device is then ready for the next operation. during internal erase operation, any attempt to read dq 7 will produce a ? 0 ? . once the internal erase opera- tion is completed, dq 7 will produce a ? 1 ? . the data# polling is valid after the rising edge of fourth we# (or ce#) pulse for program operation. for sector-, block- or chip-erase, the data# polling is valid after the rising edge of sixth we# (or ce#) pulse. see figure 6 for data# polling timing dia- gram and figure 17 for a flowchart. toggle bit (dq 6 ) during the internal program or erase operation, any con- secutive attempts to read dq 6 will produce alternating 1s and 0s, i.e., toggling between 1 and 0. when the internal program or erase operation is completed, the dq 6 bit will stop toggling. the device is then ready for the next opera- tion. the toggle bit is valid after the rising edge of fourth we# (or ce#) pulse for program operation. for sector-, block- or chip-erase, the toggle bit is valid after the rising edge of sixth we# (or ce#) pulse. see figure 7 for toggle bit timing diagram and figure 17 for a flowchart. data protection the sst39lf200a/400a/800a and sst39vf200a/400a/ 800a provide both hardware and software features to pro- tect nonvolatile data from inadvertent writes. hardware data protection noise/glitch protection : a we# or ce# pulse of less than 5 ns will not initiate a write cycle. v dd power up/down detection : the write operation is inhibited when v dd is less than 1.5v. write inhibit mode : forcing oe# low, ce# high, or we# high will inhibit the write operation. this prevents inadvert- ent writes during power-up or power-down. software data protection (sdp) the sst39lf200a/400a/800a and sst39vf200a/400a/ 800a provide the jedec approved software data protec- tion scheme for all data alteration operations, i.e., program and erase. any program operation requires the inclusion of the three-byte sequence. the three-byte load sequence is used to initiate the program operation, providing optimal protection from inadvertent write operations, e.g., during the system power-up or power-down. any erase operation requires the inclusion of six-byte sequence. this group of devices are shipped with the software data protection per- manently enabled. see table 4 for the specific software command codes. during sdp command sequence, invalid commands will abort the device to read mode within trc. the contents of dq 15 -dq 8 can be v il or v ih , but no other value, during any sdp command sequence. common flash memory interface (cfi) the sst39lf200a/400a/800a and sst39vf200a/400a/ 800a also contain the cfi information to describe the char- acteristics of the device. in order to enter the cfi query mode, the system must write three-byte sequence, same as software id entry command with 98h (cfi query com- mand) to address 5555h in the last byte sequence. once the device enters the cfi query mode, the system can read cfi data at the addresses given in tables 5 through 9. the system must write the cfi exit command to return to read mode from the cfi query mode.
4 data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 product identification the product identification mode identifies the devices as the sst39lf/vf200a, sst39lf/vf400a and sst39lf/ vf800a and manufacturer as sst. this mode may be accessed by software operations. users may use the software product identification operation to identify the part (i.e., using the device id) when using multiple manufacturers in the same socket. for details, see table 4 for software operation, figure 11 for the software id entry and read timing diagram, and figure 18 for the software id entry command sequence flowchart. product identification mode exit/ cfi mode exit in order to return to the standard read mode, the software product identification mode must be exited. exit is accom- plished by issuing the software id exit command sequence, which returns the device to the read mode. this command may also be used to reset the device to the read mode after any inadvertent transient condition that apparently causes the device to behave abnormally, e.g., not read correctly. please note that the software id exit/ cfi exit command is ignored during an internal program or erase operation. see table 4 for software command codes, figure 13 for timing waveform and figure 18 for a flowchart. table 1: p roduct i dentification t able address data manufacturer ? s id 0000h 00bfh device id sst39lf/vf200a 0001h 2789h sst39lf/vf400a 0001h 2780h sst39lf/vf800a 0001h 2781h t1.3 360
data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a 5 ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 figure 1: p in a ssignments for 48- lead tsop y-decoder i/o buffers and data latches 360 ill b1.2 address buffer & latches x-decoder dq 15 - dq 0 memory address oe# ce# we# superflash memory control logic f unctional b lock d iagram a15 a14 a13 a12 a11 a10 a9 a8 nc nc we# nc nc nc nc nc nc a7 a6 a5 a4 a3 a2 a1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 a16 nc v ss dq15 dq7 dq14 dq6 dq13 dq5 dq12 dq4 v dd dq11 dq3 dq10 dq2 dq9 dq1 dq8 dq0 oe# v ss ce# a0 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 360 ill f01.2 standard pinout top view die up sst39lf200a/400a/800a sst39vf200a/400a/800a sst39lf/vf200a a15 a14 a13 a12 a11 a10 a9 a8 nc nc we# nc nc nc nc nc a17 a7 a6 a5 a4 a3 a2 a1 sst39lf/vf400a a15 a14 a13 a12 a11 a10 a9 a8 nc nc we# nc nc nc nc a18 a17 a7 a6 a5 a4 a3 a2 a1 sst39lf/vf800a sst39lf/vf200a a16 nc v ss dq15 dq7 dq14 dq6 dq13 dq5 dq12 dq4 v dd dq11 dq3 dq10 dq2 dq9 dq1 dq8 dq0 oe# v ss ce# a0 sst39lf/vf400a a16 nc v ss dq15 dq7 dq14 dq6 dq13 dq5 dq12 dq4 v dd dq11 dq3 dq10 dq2 dq9 dq1 dq8 dq0 oe# v ss ce# a0 sst39lf/vf800a
6 data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 figure 2: p in a ssignments for 48- ball tfbga a13 a9 we# nc a7 a3 a12 a8 nc nc nc a4 a14 a10 nc nc a6 a2 a15 a11 nc nc a5 a1 a16 dq7 dq5 dq2 dq0 a0 nc dq14 dq12 dq10 dq8 ce# dq15 dq13 v dd dq11 dq9 oe# v ss dq6 dq4 dq3 dq1 v ss 360 ill f02_2.0 sst39lf/vf200a top view (balls facing down) 6 5 4 3 2 1 a b c d e f g h a13 a9 we# nc a7 a3 a12 a8 nc nc a17 a4 a14 a10 nc nc a6 a2 a15 a11 nc nc a5 a1 a16 dq7 dq5 dq2 dq0 a0 nc dq14 dq12 dq10 dq8 ce# dq15 dq13 v dd dq11 dq9 oe# v ss dq6 dq4 dq3 dq1 v ss 360 ill f02_4.0 sst39lf/vf400a top view (balls facing down) 6 5 4 3 2 1 a b c d e f g h a13 a9 we# nc a7 a3 a12 a8 nc nc a17 a4 a14 a10 nc a18 a6 a2 a15 a11 nc nc a5 a1 a16 dq7 dq5 dq2 dq0 a0 nc dq14 dq12 dq10 dq8 ce# dq15 dq13 v dd dq11 dq9 oe# v ss dq6 dq4 dq3 dq1 v ss 360 ill f02_8.0 sst39lf/vf800a top view (balls facing down) 6 5 4 3 2 1 a b c d e f g h
data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a 7 ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 table 2: p in d escription symbol pin name functions a ms 1 -a 0 address inputs to provide memory addresses. during sector-erase a ms -a 11 address lines will select the sector. during block-erase a ms -a 15 address lines will select the block. dq 15 -dq 0 data input/output to output data during read cycles and receive input data during write cycles. data is internally latched during a write cycle. the outputs are in tri-state when oe# or ce# is high. ce# chip enable to activate the device when ce# is low. oe# output enable to gate the data output buffers. we# write enable to control the write operations. v dd power supply to provide power supply voltage: 3.0-3.6v for sst39lf200a/400a/800a 2.7-3.6v for sst39vf200a/400a/800a v ss ground nc no connection unconnected pins. t2.2 360 1. a ms = most significant address a ms = a 16 for sst39lf/vf200a, a 17 for sst39lf/vf400a, and a 18 for sst39lf/vf800a table 3: o peration m odes s election mode ce# oe# we# dq address read v il v il v ih d out a in program v il v ih v il d in a in erase v il v ih v il x 1 1. x can be v il or v ih , but no other value. sector or block address, xxh for chip-erase standby v ih xxhigh z x write inhibit x v il xhigh z/ d out x xxv ih high z/ d out x product identification software mode v il v il v ih see table 4 t3.4 360
8 data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 table 4: s oftware c ommand s equence command sequence 1st bus write cycle 2nd bus write cycle 3rd bus write cycle 4th bus write cycle 5th bus write cycle 6th bus write cycle addr 1 data 2 addr 1 data 2 addr 1 data 2 addr 1 data 2 addr 1 data 2 addr 1 data 2 word-program 5555h aah 2aaah 55h 5555h a0h wa 3 data sector-erase 5555h aah 2aaah 55h 5555h 80h 5555h aah 2aaah 55h sa x 4 30h block-erase 5555h aah 2aaah 55h 5555h 80h 5555h aah 2aaah 55h ba x 4 50h chip-erase 5555h aah 2aaah 55h 5555h 80h 5555h aah 2aaah 55h 5555h 10h software id entry 5,6 5555h aah 2aaah 55h 5555h 90h cfi query entry 5 5555h aah 2aaah 55h 5555h 98h software id exit 7 / cfi exit xxh f0h software id exit 7 / cfi exit 5555h aah 2aaah 55h 5555h f0h t4.2 360 1. address format a 14 -a 0 (hex), addresses a 15 and a 16 can be v il or v ih , but no other value, for the command sequence for sst39lf/vf200a. addresses a 15 , a 16 , and a 17 can be v il or v ih , but no other value, for the command sequence for sst39lf/vf400a. addresses a 15 , a 16 , a 17 , and a 18 can be v il or v ih , but no other value, for the command sequence for sst39lf/vf800a. 2. dq 15 - dq 8 can be v il or v ih , but no other value, for the command sequence 3. wa = program word address 4. sa x for sector-erase; uses a ms -a 11 address lines ba x , for block-erase; uses a ms -a 15 address lines a ms = most significant address a ms = a 16 for sst39lf/vf200a, a 17 for sst39lf/vf400a and a 18 for sst39lf/vf800a 5. the device does not remain in software product id mode if powered down. 6. with a ms -a 1 =0; sst manufacturer ? s id= 00bfh, is read with a 0 = 0, sst39lf/vf200a device id = 2789h, is read with a 0 = 1. sst39lf/vf400a device id = 2780h, is read with a 0 = 1. sst39lf/vf800a device id = 2781h, is read with a 0 = 1. 7. both software id exit operations are equivalent table 5: cfi q uery i dentification s tring 1 for sst39lf200a/400a/800a and sst39vf200a/400a/800a 1. refer to cfi publication 100 for more details. address data data 10h 0051h query unique ascii string ? qry ? 11h 0052h 12h 0059h 13h 0001h primary oem command set 14h 0007h 15h 0000h address for primary extended table 16h 0000h 17h 0000h alternate oem command set (00h = none exists) 18h 0000h 19h 0000h address for alternate oem extended table (00h = none exits) 1ah 0000h t5.0 360
data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a 9 ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 table 6: s ystem i nterface i nformation for sst39lf200a/400a/800a and sst39vf200a/400a/800a address data data 1bh 0027h 1 v dd min. (program/erase) 0030h 1 dq 7 -dq 4 : volts, dq 3 -dq 0 : 100 millivolts 1ch 0036h v dd max. (program/erase) dq 7 -dq 4 : volts, dq 3 -dq 0 : 100 millivolts 1dh 0000h v pp min. (00h = no v pp pin) 1eh 0000h v pp max. (00h = no v pp pin) 1fh 0004h typical time out for word-program 2 n s (2 4 = 16 s) 20h 0000h typical time out for min. size buffer program 2 n s (00h = not supported) 21h 0004h typical time out for individual sector/block-erase 2 n ms (2 4 = 16 ms) 22h 0006h typical time out for chip-erase 2 n ms (2 6 = 64 ms) 23h 0001h maximum time out for word-program 2 n times typical (2 1 x 2 4 = 32 s) 24h 0000h maximum time out for buffer program 2 n times typical 25h 0001h maximum time out for individual sector/block-erase 2 n times typical (2 1 x 2 4 = 32 ms) 26h 0001h maximum time out for chip-erase 2 n times typical (2 1 x 2 6 = 128 ms) t6.2 360 1. 0030h for sst39lf200a/400a/800a and 0027h for sst39vf200a/400a/800a table 7: d evice g eometry i nformation for sst39lf/vf200a address data data 27h 0012h device size = 2 n byte (12h = 18; 2 18 = 256 kbytes) 28h 0001h flash device interface description; 0001h = x16-only asynchronous interface 29h 0000h 2ah 0000h maximum number of byte in multi-byte write = 2 n (00h = not supported) 2bh 2ch 0002h number of erase sector/block sizes supported by device 2dh 003fh sector information (y + 1 = number of sectors; z x 256b = sector size) 2eh 0000h y = 63 + 1 = 64 sectors (003fh = 63) 2fh 0010h 30h 0000h z = 16 x 256 bytes = 4 kbytes/sector (0010h = 16) 31h 0003h block information (y + 1 = number of blocks; z x 256b = block size) 32h 0000h y = 3 + 1 = 4 blocks (0003h = 3) 33h 0000h 34h 0001h z = 256 x 256 bytes = 64 kbytes/block (0100h = 256) t7.2 360
10 data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 table 8: d evice g eometry i nformation for sst39lf/vf400a address data data 27h 0013h device size = 2 n byte (13h = 19; 2 19 = 512 kbytes) 28h 0001h flash device interface description; 0001h = x16-only asynchronous interface 29h 0000h 2ah 0000h maximum number of byte in multi-byte write = 2 n (00h = not supported) 2bh 0000h 2ch 0002h number of erase sector/block sizes supported by device 2dh 007fh sector information (y + 1 = number of sectors; z x 256b = sector size) 2eh 0000h y = 127 + 1 = 128 sectors (007fh = 127) 2fh 0010h 30h 0000h z = 16 x 256 bytes = 4 kbytes/sector (0010h = 16) 31h 0007h block information (y + 1 = number of blocks; z x 256b = block size) 32h 0000h y = 7 + 1 = 8 blocks (0007h = 7) 33h 0000h 34h 0001h z = 256 x 256 bytes = 64 kbytes/block (0100h = 256) t8.1 360 table 9: d evice g eometry i nformation for sst39lf/vf800a address data data 27h 0014h device size = 2 n byte (14h = 20; 2 20 = 1 mbyte) 28h 0001h flash device interface description; 0001h = x16-only asynchronous interface 29h 0000h 2ah 0000h maximum number of byte in multi-byte write = 2 n (00h = not supported) 2bh 0000h 2ch 0002h number of erase sector/block sizes supported by device 2dh 00ffh sector information (y + 1 = number of sectors; z x 256b = sector size) 2eh 0000h y = 255 + 1 = 256 sectors (00ffh = 255) 2fh 0010h 30h 0000h z = 16 x 256 bytes = 4 kbytes/sector (0010h = 16) 31h 000fh block information (y + 1 = number of blocks; z x 256b = block size) 32h 0000h y = 15 + 1 = 16 blocks (000fh = 15) 33h 0000h 34h 0001h z = 256 x 256 bytes = 64 kbytes/block (0100h = 256) t9.0 360
data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a 11 ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 absolute maximum stress ratings (applied conditions greater than those listed under ? absolute maximum stress ratings ? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. exposure to absolute maximum stress rating conditions may affect device reliability.) temperature under bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 c to +125 c storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 c to +150 c d. c. voltage on any pin to ground potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5v to v dd + 0.5v transient voltage (<20 ns) on any pin to ground potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0v to v dd + 1.0v voltage on a 9 pin to ground potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5v to 13.2v package power dissipation capability (ta = 25 c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0w surface mount lead soldering temperature (3 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240 c output short circuit current 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 ma 1. outputs shorted for no more than one second. no more than one output shorted at a time. o perating r ange : sst39lf200a/400a/800a range ambient temp v dd commercial 0 c to +70 c 3.0-3.6v o perating r ange : sst39vf200a/400a/800a range ambient temp v dd commercial 0 c to +70 c 2.7-3.6v extended -20 c to +85 c 2.7-3.6v industrial -40 c to +85 c 2.7-3.6v ac c onditions of t est input rise/fall time . . . . . . . . . . . . . . 5 ns output load . . . . . . . . . . . . . . . . . . . . c l = 30 pf for sst39lf200a/400a/800a output load . . . . . . . . . . . . . . . . . . . . c l = 100 pf for sst39vf200a/400a/800a see figures 14 and 15
12 data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 table 10: dc o perating c haracteristics v dd = 3.0-3.6v for sst39lf200a/400a/800a and 2.7-3.6v for sst39vf200a/400a/800a symbol parameter limits test conditions min max units i dd power supply current address input = v il /v ih , at f=1/t rc min., v dd =v dd max. read 30 ma ce#=oe#=v il ,we#=v ih , all i/os open program and erase 30 ma ce#=we#=v il , oe#=v ih i sb standby v dd current 20 a ce#=v ihc , v dd = v dd max. i li input leakage current 1 a v in =gnd to v dd , v dd = v dd max. i lo output leakage current 10 a v out =gnd to v dd , v dd = v dd max. v il input low voltage 0.8 v dd = v dd min. v ih input high voltage 0.7v dd vv dd = v dd max. v ihc input high voltage (cmos) v dd -0.3 v v dd = v dd max. v ol output low voltage 0.2 v i ol = 100 a, v dd = v dd min. v oh output high voltage v dd -0.2 v i oh = -100 a, v dd = v dd min. t10.5 360 table 11: r ecommended s ystem p ower - up t imings symbol parameter minimum units t pu-read 1 1. this parameter is measured only for initial qualification and after a design or process change that could affect this paramet er. power-up to read operation 100 s t pu-write 1 power-up to program/erase operation 100 s t11.0 360 table 12: c apacitance (ta = 25 c, f=1 mhz, other pins open) parameter description test condition maximum c i/o 1 1. this parameter is measured only for initial qualification and after a design or process change that could affect this paramet er. i/o pin capacitance v i/o = 0v 12 pf c in 1 input capacitance v in = 0v 6 pf t12.0 360 table 13: r eliability c haracteristics symbol parameter minimum specification units test method n end 1 1. this parameter is measured only for initial qualification and after a design or process change that could affect this paramet er. endurance 10,000 cycles jedec standard a117 t dr 1 data retention 100 years jedec standard a103 i lt h 1 latch up 100 + i dd ma jedec standard 78 t13.1 360
data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a 13 ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 ac characteristics table 14: r ead c ycle t iming p arameters v dd = 3.0-3.6v symbol parameter sst39lf200a/400a-45 sst39lf200a/400a/800a-55 units min max min max t rc read cycle time 45 55 ns t ce chip enable access time 45 55 ns t aa address access time 45 55 ns t oe output enable access time 30 30 ns t clz 1 1. this parameter is measured only for initial qualification and after a design or process change that could affect this paramet er. ce# low to active output 0 0 ns t olz 1 oe# low to active output 0 0 ns t chz 1 ce# high to high-z output 15 15 ns t ohz 1 oe# high to high-z output 15 15 ns t oh 1 output hold from address change 0 0 ns t14.7 360 table 15: r ead c ycle t iming p arameters v dd = 2.7-3.6v symbol parameter sst39vf200a/400a/800a-70 sst39vf200a/400a/800a-90 units min max min max t rc read cycle time 70 90 ns t ce chip enable access time 70 90 ns t aa address access time 70 90 ns t oe output enable access time 35 45 ns t clz 1 1. this parameter is measured only for initial qualification and after a design or process change that could affect this paramet er. ce# low to active output 0 0 ns t olz 1 oe# low to active output 0 0 ns t chz 1 ce# high to high-z output 20 30 ns t ohz 1 oe# high to high-z output 20 30 ns t oh 1 output hold from address change 0 0 ns t15.6 360
14 data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 table 16: p rogram /e rase c ycle t iming p arameters symbol parameter min max units t bp word-program time 20 s t as address setup time 0 ns t ah address hold time 30 ns t cs we# and ce# setup time 0 ns t ch we# and ce# hold time 0 ns t oes oe# high setup time 0 ns t oeh oe# high hold time 10 ns t cp ce# pulse width 40 ns t wp we# pulse width 40 ns t wph 1 we# pulse width high 30 ns t cph 1 ce# pulse width high 30 ns t ds data setup time 30 ns t dh 1 data hold time 0 ns t ida 1 software id access and exit time 150 ns t se sector-erase 25 ms t be block-erase 25 ms t sce chip-erase 100 ms t16.0 360 1. this parameter is measured only for initial qualification and after a design or process change that could affect this paramet er.
data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a 15 ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 figure 3: r ead c ycle t iming d iagram figure 4: we# c ontrolled p rogram c ycle t iming d iagram 360 ill f03.2 address a ms-0 dq 15-0 we# oe# ce# t ce t rc t aa t oe t olz v ih high-z t clz t oh t chz high-z data valid data valid t ohz note: a ms = most significant address a ms = a 16 for sst39lf/vf200a, a 17 for sst39lf/vf400a and a 18 for sst39lf/vf800a 360 ill f04.4 address a ms-0 dq 15-0 t dh t wph t ds t wp t ah t as t ch t cs ce# sw0 sw1 sw2 5555 2aaa 5555 addr xxaa xx55 xxa0 data internal program operation starts word (addr/data) oe# we# t bp note: a ms = most significant address a ms = a 16 for sst39lf/vf200a, a 17 for sst39lf/vf400a and a 18 for sst39lf/vf800a x can be v il or v ih , but no other value.
16 data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 figure 5: ce# c ontrolled p rogram c ycle t iming d iagram figure 6: d ata # p olling t iming d iagram 360 ill f05.4 address a ms-0 dq 15-0 t dh t cph t ds t cp t ah t as t ch t cs we# sw0 sw1 sw2 5555 2aaa 5555 addr xxaa xx55 xxa0 data internal program operation starts word (addr/data) oe# ce# t bp note: a ms = most significant address a ms = a 16 for sst39lf/vf200a, a 17 for sst39lf/vf400a and a 18 for sst39lf/vf800a x can be v il or v ih , but no other value. 360 ill f06.3 address a ms-0 dq 7 data data # data # data we# oe# ce# t oeh t oe t ce t oes note: a ms = most significant address a ms = a 16 for sst39lf/vf200a, a 17 for sst39lf/vf400a and a 18 for sst39lf/vf800a
data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a 17 ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 figure 7: t oggle b it t iming d iagram figure 8: we# c ontrolled c hip -e rase t iming d iagram 360 ill f07.3 address a ms-0 dq 6 we# oe# ce# t oe t oeh t ce t oes two read cycles with same outputs note: a ms = most significant address a ms = a 16 for sst39lf/vf200a, a 17 for sst39lf/vf400a and a 18 for sst39lf/vf800a 360 ill f08.7 address a ms-0 dq 15-0 we# sw0 sw1 sw2 sw3 sw4 sw5 5555 2aaa 2aaa 5555 5555 xx55 xx10 xx55 xxaa xx80 xxaa 5555 oe# ce# six-byte code for chip-erase t sce t wp note: this device also supports ce# controlled chip-erase operation. the we# and ce# signals are interchageable as long as minimum timings are met. (see table 16) a ms = most significant address a ms = a 16 for sst39lf/vf200a, a 17 for sst39lf/vf400a and a 18 for sst39lf/vf800a x can be v il or v ih , but no other value.
18 data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 figure 9: we# c ontrolled b lock -e rase t iming d iagram figure 10: we# c ontrolled s ector -e rase t iming d iagram 360 ill f17.9 address a ms-0 dq 15-0 we# sw0 sw1 sw2 sw3 sw4 sw5 5555 2aaa 2aaa 5555 5555 xx55 xx50 xx55 xxaa xx80 xxaa ba x oe# ce# six-byte code for block-erase t be t wp note: this device also supports ce# controlled block-erase operation. the we# and ce# signals are interchageable as long as minimum timings are met. (see table 16) ba x = block address a ms = most significant address a ms = a 16 for sst39lf/vf200a, a 17 for sst39lf/vf400a and a 18 for sst39lf/vf800a x can be v il or v ih , but no other value. 360 ill f18.8 address a ms-0 dq 15-0 we# sw0 sw1 sw2 sw3 sw4 sw5 5555 2aaa 2aaa 5555 5555 xx55 xx30 xx55 xxaa xx80 xxaa sa x oe# ce# six-byte code for sector-erase t se t wp note: this device also supports ce# controlled sector-erase operation. the we# and ce# signals are interchageable as long as minimum timings are met. (see table 16) sa x = sector address a ms = most significant address a ms = a 16 for sst39lf/vf200a, a 17 for sst39lf/vf400a and a 18 for sst39lf/vf800a x can be v il or v ih , but no other value.
data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a 19 ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 figure 11: s oftware id e ntry and r ead figure 12: cfi q uery e ntry and r ead 360 ill f09.4 address a 14-0 t ida dq 15-0 we# sw0 sw1 sw2 5555 2aaa 5555 0000 0001 oe# ce# three-byte sequence for software id entry t wp t wph t aa 00bf device id xx55 xxaa xx90 device id = 2789h for sst39lf/vf200a, 2780h for sst39lf/vf400a and 2781h for sst39lf/vf800a note: x can be v il or v ih , but no other value. 360 ill f20.1 address a 14-0 t ida dq 15-0 we# sw0 sw1 sw2 5555 2aaa 5555 oe# ce# three-byte sequence for cfi query entry t wp t wph t aa xx55 xxaa xx98 note: x can be v il or v ih , but no other value.
20 data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 figure 13: s oftware id e xit /cfi e xit 360 ill f10.1 address a 14-0 dq 15-0 t ida t wp t whp we# sw0 sw1 sw2 5555 2aaa 5555 three-byte sequence for software id exit and reset oe# ce# xxaa xx55 xxf0 note: x can be v il or v ih , but no other value.
data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a 21 ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 figure 14: ac i nput /o utput r eference w aveforms figure 15: a t est l oad e xample 360 ill f11.1 reference points output input v it v iht v ilt v ot ac test inputs are driven at v iht (0.9 v dd ) for a logic ? 1 ? and v ilt (0.1 v dd ) for a logic ? 0 ? . measurement reference points for inputs and outputs are v it (0.5 v dd ) and v ot (0.5 v dd ). input rise and fall times (10% ? 90%) are <5 ns. note: v it - v input te s t v ot - v output te s t v iht - v input high test v ilt - v input low test 360 ill f12.1 to tester to dut c l
22 data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 figure 16: w ord -p rogram a lgorithm 360 ill f13.4 start load data: xxaah address: 5555h load data: xx55h address: 2aaah load data: xxa0h address: 5555h load word address/word data wait for end of program (t bp , data# polling bit, or toggle bit operation) program completed note: x can be v il or v ih , but no other value.
data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a 23 ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 figure 17: w ait o ptions 360 ill f14.0 wait t bp , t sce, t se or t be program/erase initiated internal timer toggle bit ye s ye s no no program/erase completed does dq 6 match? read same word data# polling program/erase completed program/erase completed read word is dq 7 = true data? read dq 7 program/erase initiated program/erase initiated
24 data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 figure 18: s oftware id/cfi c ommand f lowcharts 360 ill f15.4 load data: xxaah address: 5555h software id entry command sequence load data: xx55h address: 2aaah load data: xx90h address: 5555h wait t ida read software id load data: xxaah address: 5555h cfi query entry command sequence load data: xx55h address: 2aaah load data: xx98h address: 5555h wait t ida read cfi data load data: xxaah address: 5555h software id exit/cfi exit command sequence load data: xx55h address: 2aaah load data: xxf0h address: 5555h load data: xxf0h address: xxh return to normal operation wait t ida wait t ida return to normal operation note: x can be v il or v ih , but no other value.
data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a 25 ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 figure 19: e rase c ommand s equence 360 ill f16.5 load data: xxaah address: 5555h chip-erase command sequence load data: xx55h address: 2aaah load data: xx80h address: 5555h load data: xx55h address: 2aaah load data: xx10h address: 5555h load data: xxaah address: 5555h wait t sce chip erased to ffffh load data: xxaah address: 5555h sector-erase command sequence load data: xx55h address: 2aaah load data: xx80h address: 5555h load data: xx55h address: 2aaah load data: xx30h address: sa x load data: xxaah address: 5555h wait t se sector erased to ffffh load data: xxaah address: 5555h block-erase command sequence load data: xx55h address: 2aaah load data: xx80h address: 5555h load data: xx55h address: 2aaah load data: xx50h address: ba x load data: xxaah address: 5555h wait t be block erased to ffffh note: x can be v il or v ih , but no other value.
26 data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 product ordering information device speed suffix1 suffix2 sst39x fxxx a- xx -x x -x x package modifier k = 48 leads or balls numeric = die modifier package type e = tsop (12mm x 20mm) b* = tfbga (0.8mm pitch, 8mm x 10mm) b2* = tfbga (0.8mm pitch, 6mm x 8mm) b2 = tfbga (0.8mm pitch, 6mm x 8mm) u = unencapsulated die temperature range c = commercial = 0 c to +70 c e = extended = -20 c to +85 c i = industrial = -40 c to +85 c minimum endurance 4 = 10,000 cycles read access speed 45 = 45 ns 55 = 55 ns 70 = 70 ns 90 = 90 ns device density 200 = 2 megabit 400 = 4 megabit 800 = 8 megabit voltage l = 3.0-3.6v v = 2.7-3.6v
data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a 27 ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 valid combinations for sst39lf200a sst39lf200a-45-4c-ek sst39lf200a-45-4c-b3k sst39lf200a-55-4c-ek sst39lf200a-55-4c-b3k valid combinations for sst39vf200a sst39vf200a-70-4c-ek sst39vf200a-70-4c-b3k sst39vf200a-90-4c-ek sst39vf200a-90-4c-b3k sst39vf200a-90-4c-u1 sst39vf200a-70-4i-ek sst39vf200a-70-4i-b3k sst39vf200a-90-4i-ek sst39vf200a-90-4i-b3k valid combinations for sst39lf400a sst39lf400a-45-4c-ek sst39lf400a-45-4c-b3k sst39lf400a-45-4c-b2k* sst39lf400a-45-4c-bk* sst39lf400a-55-4c-ek sst39lf400a-55-4c-b3k sst39lf400a-55-4c-b2k* sst39lf400a-55-4c-bk* valid combinations for sst39vf400a sst39vf400a-70-4c-ek sst39vf400a-70-4c-b3k sst39vf400a-70-4c-b2k* SST39VF400A-70-4C-BK* sst39vf400a-90-4c-ek sst39vf400a-90-4c-b3k sst39vf400a-90-4c-b2k* sst39vf400a-90-4c-bk* sst39vf400a-90-4c-u1 sst39vf400a-70-4i-ek sst39vf400a-70-4i-b3k sst39vf400a-70-4i-b2k* sst39vf400a-70-4i-bk* sst39vf400a-90-4i-ek sst39vf400a-90-4i-b3k sst39vf400a-90-4i-b2k* sst39vf400a-90-4i-bk* valid combinations for sst39lf800a sst39lf800a-55-4c-ek sst39lf800a-55-4c-b3k sst39lf800a-55-4c-bk* valid combinations for sst39vf800a sst39vf800a-70-4c-ek sst39vf800a-70-4c-b3k sst39vf800a-70-4c-bk* sst39vf800a-90-4c-ek sst39vf800a-90-4c-b3k sst39vf800a-90-4c-bk* sst39vf800a-90-4c-u1 sst39vf800a-70-4i-ek sst39vf800a-70-4i-b3k sst39vf800a-70-4i-bk* sst39vf800a-90-4i-ek sst39vf800a-90-4i-b3k sst39vf800a-90-4i-bk* note: valid combinations are those products in mass production or will be in mass production. consult your sst sales representative to confirm availability of valid combinations and to determine availability of new combinations. * for all new designs, b3k is recommended. b3k is a 100% drop-in for bk and b2k.
28 data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 packaging diagrams 48- lead t hin s mall o utline p ackage (tsop) 12 mm x 20 mm sst p ackage c ode : ek 48-tsop-ek-ill.6 note: 1. complies with jedec publication 95 mo-142 dd dimensions, although some dimensions may be more stringent. 2. all linear dimensions are in millimeters (min/max). 3. coplanarity: 0.1 (.05) mm. 4. maximum allowable mold flash is 0.15mm at the package ends, and 0.25mm between leads. pin # 1 identifier 18.50 18.30 20.20 19.80 0.70 0.50 12.20 11.80 .270 .170 . 50 bsc 1.05 0.95 0.15 0.05 scale is 1:5 mm.
data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a 29 ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 48- ball t hin - profile , f ine - pitch b all g rid a rray (tfbga) 8 mm x 10 mm sst p ackage c ode : bk a1 corner h g f e d c b a a b c d e f g h bottom view top view 8 7 6 5 4 3 2 1 8.00 0.20 0.30 0.05 (48x) a1 corner 10.00 0.20 0.80 4.00 0.80 5.60 48ba-tfbga-bk-8x10-300mic-ill.10 note: 1. although many dimensions are similar to those of jedec publication 95, mo-210, this specific package is not registered. 2. all linear dimensions are in millimeters (min/max). 3. coplanarity: 0.1 (.05) mm. 4. the actual shape of the corners may be slightly different than as portrayed in the drawing. 8 7 6 5 4 3 2 1 1mm side view seating plane 0.21 0.05 1.10 0.10 0.15
30 data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 48- ball t hin - profile , f ine - pitch b all g rid a rray (tfbga) 6 mm x 8 mm sst p ackage c ode : b3k a1 corner h g f e d c b a a b c d e f g h bottom view top view side view 6 5 4 3 2 1 6 5 4 3 2 1 seating plane 0.35 0.05 1.10 0.10 0.15 6.00 0.20 0.45 0.05 (48x) a1 corner 8.00 0.20 0.80 4.00 0.80 5.60 48ba-tfbga-b3k-6x8-450mic-ill.0 note: 1. although many dimensions are similar to those of jedec publication 95, mo-210, this specific package is not registered. 2. all linear dimensions are in millimeters (min/max). 3. coplanarity: 0.1 (.05) mm. 4. the actual shape of the corners may be slightly different than as portrayed in the drawing. 1mm
data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a 31 ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 48- ball t hin - profile , f ine - pitch b all g rid a rray (tfbga) 6 mm x 8 mm sst p ackage c ode : b2k a1 corner h g f e d c b a a b c d e f g h bottom view top view side view 6 5 4 3 2 1 6 5 4 3 2 1 seating plane 0.23 0.03 1.10 0.10 0.15 6.00 0.20 0.335 0.035 (48x) a1 corner 8.00 0.20 0.80 4.00 0.80 5.60 48ba-tfbga-b2k-6x8-335mic-ill.4 note: 1. although many dimensions are similar to those of jedec publication 95, mo-210, this specific package is not registered. 2. all linear dimensions are in millimeters (min/max). 3. coplanarity: 0.1 (.05) mm. 4. the actual shape of the corners may be slightly different than as portrayed in the drawing. 1mm
32 data sheet 2 mbit / 4 mbit / 8 mbit multi-purpose flash sst39lf200a / sst39lf400a / sst39lf800a sst39vf200a / sst39vf400a / sst39vf800a ?2001 silicon storage technology, inc. s71117-04-000 6/01 360 silicon storage technology, inc. 1171 sonora court sunnyvale, ca 94086 telephone 408-735-9110 fax 408-735-9036 www.superflash.com or www.ssti.com

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